In:
Applied Physics Letters, AIP Publishing, Vol. 97, No. 4 ( 2010-07-26)
Abstract:
Real-time three-dimensional reciprocal space mapping (3D-RSM) measurement during In0.12Ga0.88As/GaAs(001) molecular beam epitaxial growth has been performed to investigate anisotropy in relaxation processes along [110] and [1¯10] directions caused by α and β misfit dislocations (MDs). Anisotropies, strain relaxation, and crystal quality in both directions were simultaneously evaluated via the position and broadness of 022 diffraction in 3D-RSM. In the small-thickness region, strain relaxation caused by α-MDs is higher than that caused by β-MDs, and therefore crystal quality along [110] is worse than that along [1¯10] . Rapid relaxation along both [110] and [1¯10] directions occurs at almost the same thickness. After rapid relaxation, anisotropy in strain relaxation gradually decreases, whereas crystal quality along [1¯10] direction, presumably due to β-MDs, becomes better that along [110] direction and the ratio does not decay with thickness.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink