In:
Journal of Applied Physics, AIP Publishing, Vol. 88, No. 11 ( 2000-12-01), p. 6943-6944
Abstract:
The vacancy-type Frank dislocation loops in GaP, which are the origin of shallow etch pit defects, dissolve during heat treatment via outdiffusion of the originating point defects. This forms a defect-free denuded zone under the surface of a GaP wafer. The activation enthalpy of the diffusion process of the gallium vacancy (which corresponds to the formation of the denuded zone) is estimated to be 4.0 eV.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2000
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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