In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 1B ( 1996-01-01), p. L77-
Abstract:
We have observed stimulated emission at room temperature from a photopumped homoepitaxial GaN for the first time. A homoepitaxial layer was grown by atmospheric metalorganic chemical vapor deposition (MOCVD) on small hexagonal bulk GaN prepared by the sublimation method. The lasing threshold of the pumping power density is 0.86 MW/cm 2 and the stimulated emission is polarized with its electric vector perpendicular to the c -axis.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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