In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 4S ( 2011-04-01), p. 04DD07-
Abstract:
The mechanism underlying improved data retention via high-temperature oxygen annealing of the Al 2 O 3 blocking layer in a charge-trap type flash memory device is investigated in comparison with the case of high-temperature nitrogen annealing. The results show that significant improvement of the retention property can be achieved by oxygen annealing at 1100 °C, compared to nitrogen annealing. Experimental evidence indicated that the underlying mechanism does not arise from suppression of the trap-assisted tunneling current through the blocking oxide; instead it is caused by a reduction of the thermionic emission component of the charge loss factor. This is possibly due to changes of the conduction band offset of the crystallized Al 2 O 3 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.04DD07
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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