In:
Journal of Applied Physics, AIP Publishing, Vol. 72, No. 2 ( 1992-07-15), p. 762-765
Abstract:
A new technique for bonding sulfur atoms to gallium arsenide surfaces is described. In this technique the surface is exposed to gas-phase atomic sulfur at 60–70 °C. The resulting surfaces were characterized by angle-dependent x-ray photoelectron spectroscopy. The data show that, in contrast to passivation of GaAs by H2S at low temperatures, this technique yields a surface on which the sulfur is almost exclusively bonded only to gallium atoms.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1992
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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