In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7706-
Abstract:
50 nm lines and spaces pattern etching on a Si wafer in a synchrotron radiation (SR) excited CF 4 gas atmosphere was performed under a negative bias voltage in which the SR light beam was irradiated perpendicularly to the Si wafer. As etching species, positive ions are expected to be predominant. The SR excited plasma and the excited species are discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.7706
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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