In:
Applied Physics Letters, AIP Publishing, Vol. 97, No. 25 ( 2010-12-20)
Abstract:
We demonstrate GaN-based distributed-feedback surface-emitting lasers grown on sapphire substrates with a two-dimensional (2D) square-lattice photonic crystal (PhC) that forms a high-aspect-ratio void array (void diameter: 65 nm and depth: 220 nm). The 2D PhC layer acts as both distributed-feedback grating and p-type optical cladding of a separate confinement heterostructure. To form the 2D PhC in the nitride semiconductor layers, we developed an embedding process that uses mass-transport phenomena. Crystallographic facets appeared on the inner walls of the embedded voids. Room-temperature lasing action was observed at 406.0 nm for a PhC lattice constant of 162.5 nm. The threshold current density was 9.7 kA/cm2 for a 120-μm-square p-contact electrode.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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