In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 3B ( 1999-03-01), p. L295-
Abstract:
Surface passivation of GaAs by remote PH 3 plasma treatment has been attempted. PH 3 plasma treatment leads to the removal of As oxides and phosphidization of GaAs surfaces.
The generation of As oxide is suppressed at the surface of phosphidized GaAs. Schottky junctions are formed on the GaAs surface after phosphidization. A metal work function
dependence of the barrier height is found for Schottky junctions on phosphidized GaAs under optimum conditions, suggesting that phosphidization is effective in reducing the
surface state density of GaAs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L295
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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