In:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley, Vol. 28, No. 6 ( 2015-11), p. 675-683
Abstract:
This paper investigates modeling of silicon‐germanium heterojunction bipolar transistor noise parameters and impedance‐matched Low‐Noise Amplifiers (LNAs) intended for operation across a wide temperature range (from 93 to 393 K). In general, noise performance improves with cooling until about 150 K, then degrades some because of carrier freeze‐out. With a temperature independent bias current, an LNA designed for 300 K operation shows acceptable performance from 93 to 393 K, albeit with some degradation of linearity below 120 K. Copyright © 2015 John Wiley & Sons, Ltd.
Type of Medium:
Online Resource
ISSN:
0894-3370
,
1099-1204
Language:
English
Publisher:
Wiley
Publication Date:
2015
detail.hit.zdb_id:
2030930-2
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