In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 8R ( 2001-08-01), p. 4943-
Abstract:
Deep levels in 3C-SiC on Si grown by chemical vapor deposition using hexamethyldisilane (HMDS) were investigated by the deep level transient spectroscopy (DLTS). 3C-SiC epilayers with various thicknesses were grown by changing the growth time. Relatively thin epilayers ( 〈 1 µm) showed DLTS signals in a wide temperature range. This indicates that these epilayers have defects distributed in a wide energy range. These defects seem to originate from the 3C-SiC/Si heterointerface. On the other hand, relatively thick epilayers ( 〉 2.2 µm) showed only one DLTS peak, which corresponds to a defect having an activation energy of about 0.25 eV. This defect is a donor defect and is identical with a defect observed in 3C-SiC grown from SiH 4 + C 3 H 8 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.4943
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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