In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 10R ( 1996-10-01), p. 5367-
Abstract:
An electron-beam electroreflectance (EBER) spectroscopy system combined with a scanning electron microscope has been newly developed. We can obtain the electron-beam electroreflectance spectrum from a local area monitored by the scanning electron microscope. Utilizing this contactless system, electron-beam electroreflectance spectra of GaAs and Si wafers, CuAlSe 2 and CuGaSe 2 chalcopyrite crystals grown on GaAs(001), and ZnSe thin films on GaAs(001) were measured in the range of 1.0–6.0 eV. The modulation mechanism of EBER was clarified by a systematic investigation of the modulated signal as a function of beam-current density, electron energy, and modulation frequency. We suggest that the electron-beam electroreflectance system is suitable for studying and characterizing electronic structures of semiconductors: bulk, surface/interface, heterostructures, and microstructures.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.5367
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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