In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 5A ( 1995-05-01), p. L577-
Abstract:
Elastic recoil detection analysis (ERDA) was performed to determine hydrogen concentration profiles near the (100) surfaces of epitaxially grown diamond films. Microwave plasma chemical vapor deposition (CVD) was used for the growth. At the end of the growth, the substrates were treated with and without exposure to H 2 /O 2 plasma. The areal density of hydrogen determined by ERDA ranged from 5 to 7 ×10 15 atoms/cm 2 near the surface of the specimens. These areal densities were 3–4 times larger than that of C atoms on ideal (100) surface of diamond (∼1.6 ×10 15 ).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.L577
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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