In:
Journal of Applied Physics, AIP Publishing, Vol. 95, No. 11 ( 2004-06-01), p. 7519-7521
Abstract:
A simple method where the relative change in exchange bias, introduced by external process, is measured by taking only two magnetoresistance readings at a selected field value is presented. Modeling of this measurement process showed that optimal performance can be achieved by engineering the device parameters so that the maximum in the magnetoresistance occurs near the exchange bias field and the width of the magnetoresistance (MR) curve is twice the field value of this maximum MR. Our analysis further showed that the sensitivity can be enhanced by operating the sensor at an operation field close to the exchange bias field.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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