In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 1S ( 1994-01-01), p. 767-
Abstract:
We have developed a refractory WN x /W self-aligned gate GaAs power metal-semiconductor field-effect transistor (MESFET) for use in L-band digital mobile communication systems. This power MESFET operates with high efficiency and low distortion at a gate bias of 0 V and a low drain bias of 2.7 V, because of its small drain knee voltage, high transconductance and sufficient breakdown voltage. This power MESFET is quite promising for a highly efficient linear power amplifier IC operating with a single low-voltage supply. Good output characteristics of the power MESFET with 1 mm gate width were attained for π/4-shifted quadrature phase shift keying (QPSK) modulated input signals in the 1.9-GHz band, such as an output power of 18.4 dBm, a power gain of 19.0 dB and a high power-added efficiency of 26.4% when a sufficiently low adjacent channel leakage power of -58 dBc was obtained.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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