In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 4S ( 1997-04-01), p. 2477-
Kurzfassung:
The relationship between the chemical structure of a polymer film and SiO 2 /Si selectivity was studied using X-ray photoelectron spectroscopy (XPS) and Fourier transfer infrared spectroscopy (FT-IR)-attenuated total reflection (ATR) measurements to achieve a highly selective SiO 2 etching using mixed gases based on CF 4 . The analysis of the chemical structure of the deposited polymer film revealed that the formation of a polymer film with a low F/C ratio on the Si surface is necessary for a lower etch rate of Si, and the formation of a polymer film with a low concentration of C–H x species on the SiO 2 surface is necessary to increase the etch rate of SiO 2 . Therefore, highly selective etching requires a deposited polymer film with a low concentration of fluorine and hydrogen atoms. The chemical structures of the deposited films depends on the exhaust rate. Based on these results, a highly selective SiO 2 etching with a SiO 2 /Si selectivity of over 2000 was achieved at the low temperature of 20°C by controlling the exhaust rate using mixed gases of CF 4 and C 2 H 4 .
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2477
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1997
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
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