In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 29, No. 6R ( 1990-06-01), p. 1027-
Abstract:
A layered structure consisting of alternate sublayers of µc-Si:H and a-Si:H was fabricated by means of plasma enhanced CVD from fluorinated precursors, SiH n F m ( n + m ≤3), under the condition modified periodically by the addition of SiH n as an amorphousizing agent. The structure with repeated layers of 75 Å or less in thickness was confirmed by small-angle X-ray diffraction. High photoconductivity equivalent to that of a-Si:H was maintained in the layered structures in the period of 75 Å or less despite the marked increase in optical absorption in the near-IR region of 1.0 eV–1.5 eV resulting from the optical absorption of the µc-Si:H layers.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.29.1027
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1990
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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