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  • 1
    Online Resource
    Online Resource
    American Vacuum Society ; 2003
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 21, No. 2 ( 2003-03-01), p. 688-692
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 21, No. 2 ( 2003-03-01), p. 688-692
    Abstract: Room-temperature nanoimprint lithography (RT-NIL) technology has been developed to overcome critical dimensions and pattern placement errors caused by thermal expansion in the conventional nanoimprint lithography (NIL) process. We propose RT-NIL using hydrogen silsequioxane (HSQ) instead of the poly(methylmethacrylate) used in conventional NIL. We demonstrate HSQ-replicated patterns with a 90 nm diameter hole and 50 nm linewidth for room-temperature replications. Furthermore, we have developed new nanotransfer printing technology utilizing the adhesion characteristics of HSQ. We also demonstrate the transfer of photoresist and Au patterns from a mold to a substrate.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2003
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 1982
    In:  Journal of Vacuum Science and Technology Vol. 21, No. 2 ( 1982-07-01), p. 672-676
    In: Journal of Vacuum Science and Technology, American Vacuum Society, Vol. 21, No. 2 ( 1982-07-01), p. 672-676
    Abstract: A detailed study of film formation and directional etching for high-resolution trilevel resist was performed. The top layer was CMS and AZ-1350. The intermediate layer was ion beam sputter- deposited SiO2. The bottom layer was AZ-1370. High-temperature baking of the bottom layer prevents crack generation in the SiO2 intermediate layer. Reactive ion etching in O2 gas plamsa with a carbon electrode was used to pattern the bottom layer and gave a residue-free etched surface. A study was made of undercutting during O2 etching with power, temperature, and pressure varied over wide ranges. The results agree with spectroscopic observations of the variation in the ratio of excited neutral species to ionic species in the plasma. Low pressure and low substrate temperature during the bottom layer etching were found to be necessary for a low undercut. The viability of the trilevel resist for submicron patterning was verified.
    Type of Medium: Online Resource
    ISSN: 0022-5355
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1982
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  • 3
    Online Resource
    Online Resource
    Institute of Electrical and Electronics Engineers (IEEE) ; 1987
    In:  IEEE Transactions on Electron Devices Vol. 34, No. 4 ( 1987-04), p. 759-764
    In: IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), Vol. 34, No. 4 ( 1987-04), p. 759-764
    Type of Medium: Online Resource
    ISSN: 0018-9383
    Language: Unknown
    Publisher: Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 1987
    detail.hit.zdb_id: 2028088-9
    detail.hit.zdb_id: 241634-7
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  • 4
    Online Resource
    Online Resource
    Elsevier BV ; 1997
    In:  Microelectronic Engineering Vol. 35, No. 1-4 ( 1997-02), p. 261-264
    In: Microelectronic Engineering, Elsevier BV, Vol. 35, No. 1-4 ( 1997-02), p. 261-264
    Type of Medium: Online Resource
    ISSN: 0167-9317
    Language: English
    Publisher: Elsevier BV
    Publication Date: 1997
    detail.hit.zdb_id: 1497065-X
    detail.hit.zdb_id: 605230-7
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  • 5
    Online Resource
    Online Resource
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 13, No. 4 ( 1995-07-01), p. 1473-1476
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 4 ( 1995-07-01), p. 1473-1476
    Abstract: This article reports the fabrication of sub-10-nm Si lines by e-beam lithography and aqueous potassium hydroxide (KOH)-based etching. The fabrication technique provides both the high resolution and minimum linewidth fluctuation necessary for fabricating nano-scale Si structures. In e-beam lithography, the combination of high-resolution posi-type resist and hexyl acetate developer is effective in improving the resolution and in reducing pattern fluctuation. Resist lines less than 20 nm wide with a fluctuation less than 3 nm are obtained. When these lines, aligned in the 〈112〉 direction on a (110) Si wafer, are transferred to Si by KOH etching, Si lines with a rectangular cross section are obtained and linewidth fluctuation is reduced further because (111) planes are exposed as the sidewalls. In addition, 6–9 nm wide lines can be formed by additional etching using an alcohol/KOH solution. Photoluminescence spectra are obtained for sub-10-nm Si lines after slight oxidation.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 6
    Online Resource
    Online Resource
    American Vacuum Society ; 1995
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 13, No. 6 ( 1995-11-01), p. 2170-2174
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 13, No. 6 ( 1995-11-01), p. 2170-2174
    Abstract: A new image reversal process has been developed for Si nanodevice fabrication that uses electron beam lithography and electron cyclotron resonance (ECR) plasma techniques. This process is based on Si oxidation with an ECR oxygen plasma through the openings in resist mask patterns. Si on SiO2 is selectively etched by either Cl2-based ECR plasma etching or KOH anisotropic etching by using a plasma oxide mask. ECR plasma formed silicon oxide with a thickness of 2–3 nm was found to be an excellent etch mask for these etching techniques. Highly directional ECR oxygen plasma keeps the change in the resist linewidth and edge roughness small enough for nanofabrication. Furthermore, the linewidth of reversed Si patterns can be reduced by SF6 addition to Cl2 in ECR plasma etching. This image reversal process successfully achieves 10-nm-scale Si wires and pillars.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 1995
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 7
    Online Resource
    Online Resource
    American Vacuum Society ; 2004
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 22, No. 3 ( 2004-05-01), p. 1037-1043
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 3 ( 2004-05-01), p. 1037-1043
    Abstract: This article describes the generation of roughness at the dissolution front of electron-beam positive-tone resist. The effect of a developer solvent molecule on the surface roughness as well as on the dissolution rate is investigated from the viewpoint of the size of a solvent molecule. The relationship between the dissolution rate and solvent molecular size is represented by two straight lines with different slopes in a homologous series of alkyl acetate solvents. A bending point, which corresponds to a critical molecular size, exists between ethyl and propyl acetate. This indicates that the dissolution behavior is largely different between acetates that are larger or smaller than the critical molecular size. The size of a solvent molecule is the dominant factor determining the degree of surface roughness. For a solvent molecule larger than the critical molecular size, the roughness becomes large because polymer aggregates appear on the dissolution front. For a smaller solvent molecule, on the other hand, no aggregates appeared and the dissolution front is flat and smooth. The critical molecular size is about the same as the average size of voids (free volume holes) in resist films. These results indicate that the roughness strongly depends on how a solvent molecule penetrates the resist film through void regions inhomogeneously distributed in the resist polymer matrix due to polymer aggregation.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2004
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 8
    Online Resource
    Online Resource
    Elsevier BV ; 1996
    In:  Microelectronic Engineering Vol. 30, No. 1-4 ( 1996-01), p. 463-466
    In: Microelectronic Engineering, Elsevier BV, Vol. 30, No. 1-4 ( 1996-01), p. 463-466
    Type of Medium: Online Resource
    ISSN: 0167-9317
    Language: English
    Publisher: Elsevier BV
    Publication Date: 1996
    detail.hit.zdb_id: 1497065-X
    detail.hit.zdb_id: 605230-7
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  • 9
    Online Resource
    Online Resource
    Elsevier BV ; 1996
    In:  Microelectronic Engineering Vol. 30, No. 1-4 ( 1996-01), p. 419-422
    In: Microelectronic Engineering, Elsevier BV, Vol. 30, No. 1-4 ( 1996-01), p. 419-422
    Type of Medium: Online Resource
    ISSN: 0167-9317
    Language: English
    Publisher: Elsevier BV
    Publication Date: 1996
    detail.hit.zdb_id: 1497065-X
    detail.hit.zdb_id: 605230-7
    Location Call Number Limitation Availability
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  • 10
    Online Resource
    Online Resource
    Elsevier BV ; 1995
    In:  Microelectronic Engineering Vol. 27, No. 1-4 ( 1995-2), p. 71-74
    In: Microelectronic Engineering, Elsevier BV, Vol. 27, No. 1-4 ( 1995-2), p. 71-74
    Type of Medium: Online Resource
    ISSN: 0167-9317
    Language: English
    Publisher: Elsevier BV
    Publication Date: 1995
    detail.hit.zdb_id: 1497065-X
    detail.hit.zdb_id: 605230-7
    Location Call Number Limitation Availability
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