In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 2B ( 2001-02-01), p. L140-
Abstract:
A freestanding GaN substrate over 2 inches in size was successfully prepared for the first time by hydride vapor phase epitaxy (HVPE) using GaAs as a starting substrate. In the experiment, a GaAs (111)A substrate with a SiO 2 mask pattern on its surface was used. A thick GaN layer was grown on the GaAs substrate at 1030°C through the openings in the SiO 2 mask. By dissolving the GaAs substrate in aqua regia, a freestanding GaN substrate about 500 µm thick was obtained. The full-width at half maximum (FWHM) in the ω-mode X-ray diffraction (XRD) profile of GaN (0002) plane was 106 arcsec. The dislocation density of the GaN substrate obtained was determined to be as low as 2×10 5 cm -2 by plan-view transmission electron microscopy (TEM). Hall measurements revealed the n-type conductivity of the GaN substrate with typical carrier concentration and carrier mobility of 5×10 18 cm -3 and 170 cm 2 ·V -1 ·s -1 , respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L140
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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