In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 11A ( 2000-11-01), p. L1081-
Abstract:
Selective area growth (SAG) of cubic GaN (c-GaN) was performed by metalorganic molecular beam epitaxy (MOMBE).
The substrates used in this study were vapor phase epitaxy (VPE)-grown 3C-SiC on Si (001) 4°-off substrates. As a mask, 70-nm-thick SiO 2 was formed by thermal oxidation of 3C-SiC and patterned by photolithography or focused ion beam (FIB) etching. GaN was grown on these patterned 3C-SiC substrates without a low-temperature-grown (LT) buffer layer. At a high growth temperature (850°C), growth of GaN did not occur even on a 3C-SiC surface. At a low temperature (800°C), c-GaN was epitaxially grown on a 3C-SiC surface, while polycrystalline GaN (poly-GaN) was grown on the SiO 2 -masked region. Growth of poly-GaN on the mask was suppressed by optimizing the growth temperature and V/III supply ratio. The possibility of positioning control for c-GaN microcrystals is also presented.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L1081
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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