In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 7R ( 1995-07-01), p. 3491-
Abstract:
To investigate the possibility of improving the crystal quality of a GaInSb layer grown on a Gd 3 Ga 5 O 12 substrate by metal organic chemical vapor deposition (MOCVD), experimental studies were carried out on the effect of the total reactor pressure. The lattice constant was affected by the pressure. The effect of reducing the pressure was dependent on the growth temperature. In a low-temperature regime, the lattice constant increased, and at high temperature it decreased, as the pressure was reduced. The growth rate increased as the pressure was reduced in both temperature regimes. Upon reduction of the pressure, the range of growth conditions which gives a preferentially (111)-oriented GaInSb layer became narrow.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.3491
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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