In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. 4B ( 2004-04-01), p. L588-
Abstract:
We fabricated fully epitaxial Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions (MTJs) and observed a magneto-resistance (MR) ratio of 88% at T = 293 K (146% at T = 20 K), the highest value yet reported. The origin of the high MR ratio is not the diffusive tunneling of Julliere's model but the coherent spin-polarized tunneling in epitaxial MTJs, in which only the electrons with totally symmetric wave functions with respect to the barrier-normal axis can tunnel. The bias-voltage dependence of the MR was very small, resulting in a high output voltage of 380 mV. This high voltage will help overcome problems in the development of high-density magnetoresistive random-access-memory (MRAM).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.43.L588
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2004
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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