In:
Electrical Engineering in Japan, Wiley, Vol. 156, No. 3 ( 2006-08), p. 9-15
Abstract:
The reaction coefficients of radicals on the growing surface of hydrogenated amorphous silicon nitride (a‐SiN:H) were studied by applying Monte Carlo simulation. These a‐SiN:H films were deposited on trench‐patterned silicon wafers using two kinds of gas mixture, SiH 4 −NH 3 and SiH 4 −N 2 , and then measured for their film thickness profiles and composition on the trench wall. The derived total loss coefficient, β, of radicals was estimated from comparison between the experimental results and the simulation. On the basis of these results, the main radicals during depositions will be discussed. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 156(3): 9– 15, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20343
Type of Medium:
Online Resource
ISSN:
0424-7760
,
1520-6416
Language:
English
Publisher:
Wiley
Publication Date:
2006
detail.hit.zdb_id:
1480222-3
detail.hit.zdb_id:
160761-3
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