In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 5A ( 2001-05-01), p. L428-
Abstract:
Ultraviolet photoemission spectroscopy measurement was carried out for c (001) plane Cu(Al,Ga)(S,Se) 2 chalcopyrite structure epilayers grown on GaAs(001) substrates to determine valence band discontinuities, Δ E v , at the heterointerfaces. The values of Δ E v were estimated to be about 1.2 eV for CuAlS 2 /GaAs, 1.0 eV for CuAlSe 2 /GaAs, 1.1 eV for CuGaS 2 /GaAs and 0.3 eV for CuGaSe 2 /GaAs. From these values and bandgap energies of the corresponding compounds, Cu(Al,Ga)(S,Se) 2 system is considered to offer the TYPE-I heterostructures between the corresponding narrow bandgap materials and wide bandgap ones.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L428
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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