In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 20, No. S1 ( 1981-01-01), p. 123-
Abstract:
A high speed, fully static, and 4096 word by one bit Random Access Memory has been developed, using short channel MOSFETs with platinum silicide (PtSi) coated polysilicon gate and PtSi coated n + diffusion layer as low resistive wiring. The present RAM was operated on a single 5±1 volt power supply. Its typical performances are 21 nsec address access time, 23 nsec chip select access time, 500 mW operating power and 50 mW stand by power.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAPS.20S1.123
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1981
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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