In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 12 ( 2016-12-01), p. 1202BG-
Abstract:
Etch pits of various shapes were observed on etched β-Ga 2 O 3 (010) single crystals and classified into types A–F according to shape. Type-A etch pits changed in shape in the order of types B, C, and D by etching. Groove-shaped pits observed on as-grown β-Ga 2 O 3 (010) single crystal surfaces [K. Hanada et al., Jpn. J. Appl. Phys. 55 , 030303 (2016) ] were classified into type G. Type-G pits, which were determined to be void defects because of three-dimentional spaces in single crystals, existed before etching and changed to type A after etching. Therefore, after etching, void defects must change in shape as follows: Type G → A → B → C → D. The exposed facets change with etching time. Types-E and -F etch pits were observed to be parallelograms and hexagons, respectively. Types-E and -F etch pits must include dislocations along the [010] direction because they did not change in shape after etching.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.1202BG
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink