In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 4R ( 1997-04-01), p. 2323-
Abstract:
The epitaxial growth of titanium nitride (TiN) films, formed by implanting nitrogen ions (N 2 + ) with 62 keV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied mainly by transmission electron microscopy. It has been revealed that (001)-oriented TiN y is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The nitriding mechanism of epitaxial Ti thin films is discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2323
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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