In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 5A ( 2001-05-01), p. L420-
Abstract:
Al 1- x In x N epilayers with a thickness of 20 nm grown on GaN were characterized. It was found that the surface roughness of very thin Al 1- x In x N is more sensitive to the growth temperature than to the lattice mismatch to GaN. Multiple layers of (Al 0.95 In 0.05 N/Al 0.10 Ga 0.90 N) 5 were grown at different temperatures. X-ray diffraction measurement revealed that the sample grown at 800°C is of high quality, showing up to five orders of sharp satellite peaks, while no clear satellite peaks are observed from the sample grown at 720°C. Transmission electron microscopy observation revealed that multiple layers grown at 800°C exhibit very sharp interfaces.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.40.L420
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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