In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 11R ( 1995-11-01), p. 6106-
Abstract:
Minority-carrier diffusion, instead of direct penetration of pump light, can be a dominant factor which determines the probed region in photoreflectance measurements of epitaxial GaAs wafers. Appearance of Franz-Keldysh oscillations (FKOs) originating from epitaxial layer/substrate interfaces is found to critically depend on the penetration depth of pump light relative to the surface depletion-layer width. This relationship indicates the importance of generation and diffusion of minority carriers within the neutral region, which can induce photoreflectance from unexpectedly deep locations. By inserting a potential barrier (a doped AlAs layer) into the path for minority-carrier diffusion, such a FKO component is shown to be eliminated. The experiment confirms that the sample under study is indeed in the diffusion-limited regime, and at the same time, provides a simple method which allows an accurate evaluation of the FKOs from the doped region (surface depletion layer), which usually is of interest from technological aspects.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.6106
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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