In:
Surface and Interface Analysis, Wiley, Vol. 37, No. 2 ( 2005-02), p. 171-175
Abstract:
An ultrahigh vacuum floating‐type low‐energy ion gun (UHV‐FLIG) with a differential pumping system was developed. The developed UHV‐FLIG ensured high ion current densities of ∼45 and ∼20 µA cm −2 for Ar + ions of 300 and 100 eV, respectively, under the UHV condition of the analysis chamber below ∼4 × 10 −6 Pa. The application of the developed UHV‐FLIG to Auger electron spectroscopy (AES) sputter depth profiling of a GaAs/AlAs superlattice material revealed that the ultimate high depth resolution of ∼1.0 nm was achieved by sputter etching using 100 eV Ar + ions. The present results confirmed that lowering the primary energy of Ar + ions to 100 eV is still significantly effective for achieving higher depth resolution in sputter depth profiling. Copyright © 2005 John Wiley & Sons, Ltd.
Type of Medium:
Online Resource
ISSN:
0142-2421
,
1096-9918
Language:
English
Publisher:
Wiley
Publication Date:
2005
detail.hit.zdb_id:
2023881-2
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