In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 7S ( 1999-07-01), p. 4520-
Abstract:
Plasma copolymerization of hexamethyldisiloxane
(HMDSO, (CH 3 ) 3 -Si-O-Si-(CH 3 ) 3 ) and
tetrafluoroethylene (CF 2 =CF 2 ) was performed
using an RF plasma enhanced chemical vapor deposition method, for its application to low dielectric constant intermetal dielectrics.
Film structure was investigated by X-ray photoelectron spectroscopy and Fourier transform infrared (FT-IR) spectroscopy.
Film composition was controlled gradually from that of fluorinated carbon to organic siloxane by changing the HMDSO mixing ratio. The films possessed a dielectric constant of less than 2.5
for an HMDSO mixing ratio of less than 10%. Thermal treatment of the films revealed that the C-F n , Si-O-Si,
Si-(CH 3 ) n and Si-(CH 2 ) n -Si bonds were stable to
400°C, but the C-H 2 bonds were not. In situ gas-phase
FT-IR spectroscopy was also performed on the plasma, and the reaction mechanisms are discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.4520
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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