In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 4S ( 2011-04-01), p. 04DD09-
Abstract:
We have fabricated inorganic ferroelectric-gate thin-film transistors (FGTs) using only a chemical solution deposition (CSD) process. All layers, including the LaNiO 3 (LNO) gate electrode, Pb(Zr,Ti)O 3 (PZT) ferroelectric-gate insulator, indium–tin-oxide (ITO) source/drain electrodes, and ITO channel, were formed on a SrTiO 3 (STO) substrate by the CSD process. We obtained a local epitaxially grown PZT/LNO perovskite heterostructure with good crystalline quality and no interfacial layer. The fabricated FGT exhibited typical n-channel transistor operation, with a counterclockwise hysteresis loop due to the ferroelectric nature of the PZT-gate insulator, and also exhibited good drain current saturation in output characteristics. These properties are equivalent to or better than those obtained with FGTs fabricated by means of conventional vacuum processes. The obtained on/off current ratio, memory window, and subthreshold voltage swing were about 10 6 , 2.5 V, and 357 mV/decade, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.04DD09
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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