In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 1A ( 1991-01-01), p. L7-
Abstract:
The influence of nitrogen incorporation in a-Si:H films by mercury-photosensitized decomposition of a silaneammonia gas mixture was investigated. It was found that there are two different film structures of a-Si:H films. In a high nitrogen concentration, nitrogen is one of the elements of the a-SiN x alloy. On the other hand, in a low nitrogen concentration, nitrogen plays the role of a dopant in a-Si:H, and nitrogen-induced localized states are created at around 0.5 eV above the valence band edge.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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