In:
physica status solidi c, Wiley, Vol. 5, No. 6 ( 2008-05), p. 2044-2046
Abstract:
At 2006 IEDM outstanding potential of GaN MMIC technology for RF power applications at frequencies exceeding 80 GHz was reported for the first time. The first reported W‐band GaN power MMIC had over 16 dB of saturated power gain in a frequency range between 78 GHz and 88 GHz and produced almost the same output power at this frequency band as the state of the art InP HEMT MMIC with 10 times larger output device periphery. In this presentation we will describe improvements in GaN MMIC process that led to these breakthrough results and discuss the impact of GaN technology on the development of high frequency millimeter‐wave power modules. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200878748
Language:
English
Publisher:
Wiley
Publication Date:
2008
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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