In:
Solar RRL, Wiley, Vol. 6, No. 2 ( 2022-02)
Abstract:
Sb 2 Se 3 is an emerging earth‐abundant material praised for its promising optoelectronic properties, although the presence of interfacial defects at the vicinity of the p–n junction limit its performance as photovoltaic absorber. Using a device modeling approach and a realistic set of material parameters, it unravels pathways mitigating the impact of interfacial defects with a baseline Sb 2 Se 3 /CdS. Two straightforward strategies are devised and tested against the baseline. First, a thin front surface sulfurization of the Sb 2 Se 3 absorber allowing a local lowering of the valence band and creating a “front surface field,” resulting in an increased carrier selectivity and limiting the density of holes available for interface recombination, leading to a significant efficiency improvement for optimized conditions. Second, the use of an ultrathin insulating Al 2 O 3 layer between the absorber and the buffer layer is considered, helping in preventing detrimental chemical interdiffusion at the junction. This strategy provides a direct interface passivation, though the interlayer thickness needs a fine tuning to balance the benefits of reduced interface recombination and a detrimental Al 2 O 3 low‐conductivity layer. In each case, an analysis covering a broad range of parameters is presented, and conclusions are made in the frame of past numerical and experimental results.
Type of Medium:
Online Resource
ISSN:
2367-198X
,
2367-198X
DOI:
10.1002/solr.202100911
Language:
English
Publisher:
Wiley
Publication Date:
2022
detail.hit.zdb_id:
2882014-9
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