In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4R ( 1996-04-01), p. 2090-
Abstract:
A new metal/insulator tunnel transistor (MITT) is proposed as a nanometer switching device. In the transistor, metal/insulator/metal tunnel currents are controlled by a gate electrode placed above the insulator, as in a metal/oxide/semi-conductor field-effect transistor. The characteristics of this MITT are theoretically studied using a computer simulation. It is confirmed that this new device operates in the same way as conventional semiconductor devices. The currents flowing through an insulator between two metals can be controlled in the ranges from 10 -16 A to 10 -5 A at 77 K and from 10 -11 A to 10 -6 A at room temperature, for a variation in gate voltage of 2 V, when the channel length, i.e. the thickness of the sandwiched insulator, is between 15 nm and 20 nm and the relative dielectric constant of the channel is assumed 5. The switching speed is estimated to be of the order of picoseconds (ps) for operation at 77 K and about 100 ps for operation at room temperature.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.2090
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink