In:
Journal of the Society for Information Display, Wiley, Vol. 22, No. 1 ( 2014-01), p. 55-67
Abstract:
Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c ‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c ‐axis alignment, its a ‐axis and b ‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.
Type of Medium:
Online Resource
ISSN:
1071-0922
,
1938-3657
Language:
English
Publisher:
Wiley
Publication Date:
2014
detail.hit.zdb_id:
2190777-8
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