In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 31, No. 4 ( 2013-07-01)
Abstract:
The thermoelectric properties and figures of merit for single crystal Sc1−xErxAs particles embedded in In0.53Ga0.47As nanocomposites are reported as a function of rare earth concentration. The materials are grown epitaxially on InP (001) substrates by molecular beam epitaxy. Larger Sc to Er ratios led to the nucleation of larger nanoparticles, the addition of fewer electrically active carriers, and to higher Seebeck coefficients in the nanocomposites. The thermal conductivity of In0.53Ga0.47As is measured by the 3ω method and found to decrease rapidly with the addition of rare earth elements. The highest room temperature ZT values are obtained for nanocomposites containing less than 0.5% Sc1−xErxAs particles relative to In0.53Ga0.47As.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2013
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
Permalink