In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 4R ( 1999-04-01), p. 2044-
Abstract:
Capacitance–voltage ( C – V ) characteristics of the
metal-ferroelectrics-insulator-silicon (MFIS) structure have been calculated by the conventional metal-oxide-silicon (MOS) analysis
method. The potential profile is obtained by using the Poisson equation of D – E hysteresis, and its capacitance is estimated as
combination of SiO 2 -Si capacitance and ferroelectric film
capacitance obtained from dielectric constant corresponding to the internal field. PbZr x Ti 1- x O 3 (PZT) and
SrBi 2 Ta 2 O 9 (SBT) ferroelectrics, SiO 2 , MgO, SrTiO 3 (STO) and CeO 2 insulators, and silicon semiconductor, were used
as independent parameters for the analyses. The dependence of MFIS C – V characteristics on ferroelectric properties, film thickness
and impurity concentration of the semiconductor is calculated. Film thicknesses of ferroelectrics and insulators affect the memory
window width markedly, and have to be optimized in order to obtain a large memory window width. On the other hand, MFIS C – V characteristics and memory window width are not influenced by P r because the effective P r is small in the MFIS structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.2044
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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