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  • 1
    Online Resource
    Online Resource
    IOP Publishing ; 1995
    In:  Japanese Journal of Applied Physics Vol. 34, No. 12S ( 1995-12-01), p. 6961-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 12S ( 1995-12-01), p. 6961-
    Abstract:   We have developed an SiO 2 /poly-Si multilayered electron beam resist process in order to overcome the resolution limit in conventional polymer electron beam resists and to form suspended masks for ultrasmall metal-insulator-metal tunnel junction fabrication. Using a solution of buffered HF and a mixed solution of HNO 3 and HF as etching solutions for SiO 2 and poly-Si, respectively, suspended masks for metal depositions were produced. Utilizing a multiple-angle deposition-oxidation-deposition method, we have realized an ultrasmall Al/Al 2 O 3 /Al tunnel junction array which exhibits a clear Coulomb staircase in the current-voltage characteristics at 12 K.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1995
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 2
    Online Resource
    Online Resource
    IOP Publishing ; 1996
    In:  Japanese Journal of Applied Physics Vol. 35, No. 12S ( 1996-12-01), p. 6673-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12S ( 1996-12-01), p. 6673-
    Abstract: We have developed an SiO 2 /c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO 2 /poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO 2 and c-Si by using buffered HF solution and NMD-3 solution, respectively, are optimized. The developed SiO 2 /c-Si EB resist system is used to produce a suspended mask structure with an opening of 12 nm width for the double angle deposition of Ti for our proposed ultrasmall metal-insulator-metal tunnel junction fabrication process. We have also demonstrated the successful lift-off of inorganic resist by removing underlying c-Si layer of 40 ×40 µ m 2 area using NMD-3 solution at 70° C, leaving an array of isolated Ti–TiO x –Ti dots, each having few hundred nm 2 area, on the substrate.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 3
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7691-
    Abstract: The electron beam assisted chemical etching (EBACE) method with hydrogen gas is applicable to direct fine patterning of single-crystal diamond substrates. A scanning electron microscope (SEM) combined with a gas introduction system was used for EBACE. Hole, line and rectangular patterns were successfully fabricated. In the case of fabrication of the rectangular pattern, the etched depths are proportional to the electron dose. The etching rate using oxygen gas is faster than that using hydrogen gas. Raman scattering was used to confirm whether amorphous carbon was formed on the etched areas. The obtained Raman spectra indicate that areas etched using both hydrogen gas and oxygen gas do not form amorphous carbon.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 4
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 12S ( 2000-12-01), p. 7070-
    Abstract: Diamond molds were fabricated by two types of fabrication processes, both of which use a conductive intermediate layer between the diamond surface and polymethylmethacrylate (PMMA) resist to prevent surface charge-up. Using a PtPd intermediate layer, electron beam lithography and ion beam etching, a denting line pattern of 600 nm width and 70 nm depth was fabricated. Using a carbon intermediate layer, electron beam lithography, PtPd lift-off and oxygen ion beam etching, a convex line pattern of 600 nm width and 110 nm height was fabricated. These diamond molds were pressed into PMMA on a silicon substrate that was heated to a temperature of 150°C and kept at a pressure of 23.5 MPa until the temperature dropped below 90°C, and then the diamond mold was released from the PMMA. The convex line pattern of 600 nm width and 150 nm height was imprinted using a denting diamond mold. The denting pattern of 1100 nm width and 180 nm height was imprinted using a convex diamond mold. PMMA patterns were transferred well over the imprinted area by the diamond molds.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 5
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6739-
    Abstract: In this paper, a near-field photolithographic method which can realize ultra high resolution beyond the diffraction limit of light is described. Evanescent light generated on a transparent mold with a micro-relief illuminated on the condition of total internal reflection is used to expose a photoresist in contact with the mold. The plastic replica mold is flexible to eliminate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with the photoresist is disposable to maintain a high yield rate. We printed sub-100 nm features on a commercially available photoresist using 442-nm-wavelength light.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1998
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 6
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 4S ( 1996-04-01), p. 2416-
    Abstract: Laser-induced surface reaction for the Si(111)/Cl 2 system has been observed using second-harmonic generation (SHG). Chlorine gas molecules are introduced to the clean Si surface and their adsorption, desorption and reaction are indirectly measured by surface SHG. In the case of Nd:YAG laser measurement, SHG output decays rapidly with exposure to Cl 2 and is recovered by pump beam irradiation with a power of 65 mJ/pulse. Cl coverage can be estimated from SHG intensity and we determine the mean residence times of adsorbed Cl to be 300 ns and 11.4 s with and without pump beam exposure, respectively, at a sample temperature of 180° C. In the case of Ti-sapphire laser measurement, SHG outputs increase and decay rapidly with exposure to Cl 2 as measured by 800 nm and 1300 nm probe beams, respectively.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1996
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 7
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 12S ( 1994-12-01), p. 7228-
    Abstract: Evaluating the low-temperature mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochronal annealing revealed that at around 450 K the degraded mobility recovered quickly in the 90-K-irradiated sample and gradually in the sample irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defects.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 8
    Online Resource
    Online Resource
    IOP Publishing ; 1997
    In:  Japanese Journal of Applied Physics Vol. 36, No. 12S ( 1997-12-01), p. 7686-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7686-
    Abstract: Electron-beam-induced deposition using WF 6 gas was used to directly fabricate conductive wires. In view of the gas supply, repeated fast electron beam scanning had been thought to be more efficient than single slow scanning. The results, however, proved otherwise. There are three possible reasons: (1) less beam drift, (2) rise in temperature of beam exposure region, and (3) numerous secondary electrons generated from the inclined growth front of a wire. The first possibility is clearly negated by an experiment where beam drift is negligible. The second possibility is thought to be low because the rise in temperature is estimated to be less than 1° C. Simulation of wire growth using the string model where the secondary electron effect is taken into account gives good agreement with the experimental results. Detailed observation of fabricated wires using an atomic force microscope supports the idea that the high growth rate is most likely caused by the increase in numbers of secondary electrons generated.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1997
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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  • 9
    Online Resource
    Online Resource
    IOP Publishing ; 1993
    In:  Japanese Journal of Applied Physics Vol. 32, No. 12S ( 1993-12-01), p. 6153-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 12S ( 1993-12-01), p. 6153-
    Abstract: Characteristics of thermally grown SiO 2 , which is a candidate for high-resolution electron beam resists, are studied. In order to improve the selectivity (the etch rate ratio of electron-irradiated area to unirradiated area) which defines the profile of developed patterns, the etching property of electron-irradiated SiO 2 is investigated for various solutions. To eliminate the effect of contamination resulting from electron irradiation, oxygen plasma ashing is used after the irradiation. The saturated selectivity at a dose of about 2 C/cm 2 is 1.6 to 3.3 for HF-based solution while it is almost unity for aqueous KOH. Although the etch rate of unirradiated SiO2 follows the linear combination of [HF] and [HF 2 - ], that of electron irradiated SiO 2 does not follow such a relation. The saturated selectivity of a mixture of HF and NH 4 F takes a maximum at the composition of [HF] and [HF 2 - ] of nearly equal quantities. The profile of the etched groove is well calculated by using a string model. A 20 nm line is fabricated onto SiO 2 of an initial thickness of 120 nm by this process.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    RVK:
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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  • 10
    Online Resource
    Online Resource
    IOP Publishing ; 1993
    In:  Japanese Journal of Applied Physics Vol. 32, No. 12S ( 1993-12-01), p. 6168-
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 12S ( 1993-12-01), p. 6168-
    Abstract: The characteristics of ion-beam-assisted etching (IBAE) of Si with Cl 2 have been investigated using a broad-pulsed Ga ion beam, with several parameters such as Cl 2 gas flux, ion beam dwell time, sample temperature, and beam diameter. A simple adsorption model where the density of the adsorbed Cl 2 molecules mainly rules the etching yield, can explain the trend of the process in a short dwell-time region of less than 1 ms, and etching parameters are determined. However in a longer dwell-time region of more than 10 ms, the experiment showed several times higher etching yield than the prediction using the simple model with a 2.2-µm-diam beam. The etching model with consideration of Cl 2 surface diffusion can explain this difference in etching yield and shows good agreement with the experiment throughout the entire region of dwell time. A diffusion coefficient of 8.0×10 -6 cm 2 /s at room temperature was obtained by fitting theoretical curves in the experiment.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
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    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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