In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 9L ( 2005-09-01), p. L1237-
Abstract:
Current-induced magnetization switching was demonstrated on Co–Fe–B/MgO/Co–Fe–B magnetic tunnel junctions (MTJs), which exhibited giant tunnel magnetoresistance ratios of about 100%. Switching current density at a pulse duration of 100 ms was about 6×10 6 A/cm 2 at room temperature. The switching current density was reduced to one-third of the smallest value for the MgO-based MTJs reported to date. Dependence of the switching current on pulse duration and on the external magnetic field was discussed based on a theoretical model incorporating thermally activated spin-transfer switching. The spin-transfer switching in the MgO-based MTJs realizes low writing power consumption and a high read-out signal in high-density magnetoresistive random access memory.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L1237
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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