In:
physica status solidi (a), Wiley, Vol. 215, No. 5 ( 2018-03)
Abstract:
Pentacene organic thin‐film transistors (OTFTs) using high‐k Nd x Nb (1− x ) O gate dielectric with different Nb contents ( x = 1, 0.950, 0.908, and 0.877) are fabricated. The best OTFT has x = 0.950, achieving a high carrier mobility of 1.95 cm 2 V −1 s −1 , small threshold voltage of −1.57 V, small sub‐threshold swing of 0.13 V dec −1 , and small hysteresis of 0.13 V. Atomic force microscopy and X‐ray photoelectron spectroscopy measurements reveal that the Nb doping can suppress the hygroscopicity of Nd oxide to produce a smoother dielectric surface, on which larger pentacene grains are grown to result in higher carrier mobility. The hysteresis of the OTFTs is attributed to donor‐like traps associated with the hydroxide formed in Nd 2 O 3 after absorbing moisture and also acceptor‐like traps (in the form of oxygen vacancies) induced by Nb incorporation.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201700609
Language:
English
Publisher:
Wiley
Publication Date:
2018
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2
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