In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 28, No. 12R ( 1989-12-01), p. 2576-
Abstract:
The solid state reaction between a thick Fe-film and β-SiC (100) surface in UHV has been studied using AES in conjunction with ion sputtering. Upon annealing of the thick-Fe-film/SiC at 250°C, only the C-atoms diffused to the film surface and exhibited a Fe 3 C feature. During a 540°C anneal, the Si-atoms also segregated at the surface through grain boundary diffusion and formed the elemental-Si and the Fe-silicide phase. The depth profile showed that the atomic ratio among silicide, Fe 3 C, graphite and unreacted-Fe in the film was approximately 1:2:0.8:15, indicating a limited reaction. Big pile-ups of both Fe 3 C and elemental-Si were detected at the Fe-SiC interface, which suggests that the Fe 3 C acts as a reaction barrier and prevents the free Si-atoms from diffusing into the Fe-film.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.28.2576
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1989
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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