In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 22, No. 4A ( 1983-04-01), p. L221-
Abstract:
The temperature dependence of the threshold voltage shift has been studied for long term device degradations. The threshold voltage shift strongly depends on temperature and this is mainly caused by the temperature dependence of the effective trap density. The model assuming that the traps with an emission probability higher than 10 -5 ∼10 -6 are useless as electron traps agrees well with the experimental results.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.22.L221
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1983
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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