In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 11R ( 2000-11-01), p. 6212-
Abstract:
The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiN x :H/InP structures were analyzed. To obtain the interface state density, deep level transient spectroscopy (DLTS) measurements were carried out. We have also evaluated the insulator damage density, the so-called disorder-induced gap states (DIGS), by means of conductance transient analysis. As for the dielectric composition, both the x =0.97 and x =1.43 values provide interfacial state density and DIGS damage values of the same order of magnitude. In the x =0.97 case, RTA treatments reduce the insulator damage moving it towards the interface. In the x =1.43 case this behavior is only observed for RTA temperatures lower than 500°C. So, moderate temperature ( 〈 500°C) RTA treatments improve DIGS damage. This is an important result in terms of fabricating bi-layered metal-insulator-semiconductor (MIS) structures that not only have good-quality interfaces, but also good dielectric properties.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.6212
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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