In:
Journal of Applied Physics, AIP Publishing, Vol. 51, No. 11 ( 1980-11-01), p. 5792-5796
Abstract:
Channeled-proton-induced x rays (CPIX) were used to measure displacement damage produced in sapphire (α-Al2O3) by ion bombardment at room temperature. A method based on dechanneling theory was developed for the interpretation of CPIX results in terms of numbers of displaced atoms. The results agreed with those obtained with the Rutherford-backscattering-channeling (RBC) technique. The dependence of displacement damage on energy partition was evaluated by selection of ion species and incident energy (20 keV, H+2; 20 keV, He+; 70 keV, N+ and 500 keV, Xe++). Except for H+2 implantation, the net number of displaced atoms at damage levels below saturation was found to depend almost entirely upon the energy deposited into atomic collision processes. For the hydrogen implantations the damage was approximately a factor of 4 higher for equal energy into atomic collisions. Comparison of channeling along the 〈0001〉 and 〈1120〉 directions revealed that aluminum atoms are displaced preferentially into sites along c-axis rows. Ionization-stimulated annealing was investigated with the CPIX technique. Exposure of ion-bombardment-damaged samples to ionizing radiation did not produce annealing measureable by CPIX.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1980
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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