In:
Semiconductor Science and Technology, IOP Publishing, Vol. 36, No. 3 ( 2021-03-01), p. 034006-
Abstract:
Among the salient features of gallium nitride (GaN) power semiconductor devices is their high-temperature capability. However, commercial GaN devices, such as the high-electron-mobility transistors (HEMTs), are limited to 125 °C junction-temperature operation because of their packaging. To explore the high-temperature capability of GaN power devices, a commercial 650 V, 150 A enhancement-mode GaN HEMT chip was packaged by silver-sintering die-bonding on direct-bond-copper substrate and encapsulation in a high-temperature polymer enclosure filled with nitrogen. Static characteristics of the packaged GaN device were measured at temperatures up to 250 °C. The threshold voltage of the transistor at 250 °C decreased to around 0.9 V, about 30% lower than that at room temperature. At temperatures beyond 150 °C, the saturation current fell sharply below the rated current, resulting in a rapid rise in the on-resistance versus current. At 250 °C, the saturation current decreased rapidly to around 67 A, 〈 45% of the rated current. The reverse leakage also increased sharply at temperatures beyond 150 °C. Although the packaged device was operational at 250 °C, one would need to significantly lower the expectations for its performance and address the challenges of packaging and thermal management if it were to be used in a high-temperature power converter.
Type of Medium:
Online Resource
ISSN:
0268-1242
,
1361-6641
DOI:
10.1088/1361-6641/abdf2a
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
54647-1
detail.hit.zdb_id:
1361285-2
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