In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12R ( 1996-12-01), p. 5991-
Abstract:
Heterojunction field-effect transistors (HFET's) with a GaAs, an InGaAs, and a GaAs/InGaAs doped channel have been fabricated and compared. The HFET's with an InGaAs doped channel show better performance than that of HFET's with a GaAs doped channel. Another device with a high-low double GaAs/InGaAs doped channel exhibits a much higher breakdown voltage. The parallel conduction and transconductance suppression could be avoided in the doped-channel FET's. All devices display broad plateaus on their transconductance vs. gate-to-source voltage profiles through a large voltage swing. For 1.5×100 µ m 2 devices, the measured extrinsic transconductances (breakdown voltages) are 130 (15), 152 (17), and 184 (25) mS/mm (V) for a GaAs, an InGaAs, and a GaAs/InGaAs double strained doped channel FET's, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.5991
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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