In:
Journal of Advanced Dielectrics, World Scientific Pub Co Pte Ltd, Vol. 10, No. 04 ( 2020-08), p. 2050016-
Abstract:
Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb 2 Se 3 films on substrates. The influence of deposition temperature, distance between the Sb 2 Se 3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb 2 Se 3 thin film is employed to fabricate photodetector with a structure of ITO/SnO 2 /Sb 2 Se 3 /Au, where the spin-coated SnO 2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text] mA W[Formula: see text] at 750[Formula: see text] nm.
Type of Medium:
Online Resource
ISSN:
2010-135X
,
2010-1368
DOI:
10.1142/S2010135X20500162
Language:
English
Publisher:
World Scientific Pub Co Pte Ltd
Publication Date:
2020
detail.hit.zdb_id:
2756564-6
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