In:
Journal of Nanoelectronics and Optoelectronics, American Scientific Publishers, Vol. 16, No. 8 ( 2021-08-01), p. 1220-1226
Abstract:
SCAPS software as a simulation tool was applied to investigate the photovoltaic performance of Cu 2 Zn 4 SnS 4 (CZTS) thin film solar cells. Firstly, the influence of the work function of back contact on the open circuit voltage ( Voc ) and efficiency
was studied, which increased with the work function and reached the maximum at 5.2 eV. The variation of the efficiency with the conduction band offset (CBO) at CZTS/CdS interface was discussed. The high efficiency of 12% can be obtained when CBO value changed from −0.1 to 0.2 eV, which means a little cliff-like or spike-like band alignment at the CZTS/CdS interface. Under a large spikelike CBO, the efficiency sharply declined because of the large barrier blocking the photo-generated carriers. Furthermore, the recombination and optical electronic characteristics were researched
through the insertion of an intermediate layer at absorber/back contact and buffer/absorber interfaces. With the carrier concentration in p + -CZTS intermediate layer inserted at CZTS/Mo interface increasing from 10 15 to 10 18 cm −3 , the Voc increased from 0.736 V to 0.850 V which promoted the efficiency from 12.03% to 15.60%. By inserting a low doped p-CZTS intermediate layer at CZTS/CdS interface, the efficiency achieved to 17.31%, which is attributed to the low recombination. At the concentration greater than 10 17 cm −3 , the close concentration of electron and hole resulted in the large recombination and inferior performance. The research scheme used in this paper is significant for CZTS-based or other photovoltaic solar cells.
Type of Medium:
Online Resource
ISSN:
1555-130X
DOI:
10.1166/jno.2021.3059
Language:
English
Publisher:
American Scientific Publishers
Publication Date:
2021
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