In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 2R ( 2010-02-01), p. 020215-
Abstract:
A Cu-metallized InGaP/GaAs heterojunction bipolar transistor (HBT) using a Pd/Ge/Cu n-type ohmic contact, a Pt/Ti/Pt/Cu p-type ohmic contact, and a Ti/Pt/Cu interconnect has been fabricated for power applications. The 4×20 µm 2 HBT had an output power of 11.25 dBm with a power-added efficiency of 35.1%. After applying current-accelerated stress for 24 h, the current gain remained larger than 125. The device was also annealed at 200 °C for 24 h, and showed a slight decrease in output power from 10.06 to 9.83 dBm. The results demonstrated that reliable Cu metallization can be used for fabricating InGaP/GaAs HBTs for power applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.020215
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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